features ? vhf/uhf transistor marking: 3e1 m aximum r atings ( t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage 30 v v ceo collector - emitter voltage 25 v v ebo emitter - base voltage 3 v i c collector current 40 m a p c collector power dissipation 350 m w r ja thermal resistance from j u n ction to a mbient 357 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown voltage v (br) cbo i c = 1 00 a , i e =0 30 v collector - emitter breakdown voltage v (br) c e o i c = 1 ma, i b =0 25 v emitter - base breakdown voltage v (br)eb o i e = 10 a , i c =0 3 v collector cut - off current i cbo v cb = 25 v, i e =0 0.1 a emitter cut - off current i ebo v eb = 2 v, i c = 0 0.1 a dc current gain h fe v ce = 10 v, i c = 4 m a 60 collector - emitter saturation voltage v ce(sat) i c = 4 m a, i b = 0.4 ma 0.5 v b ase - emitter voltage v b e v ce = 10 v, i c = 4m a 0.95 v transition frequency f t v ce = 1 0 v,i c = 4 ma , f=1 00 mhz 650 mhz collector outpu t capacitance c ob v cb = 10 v, i e =0, f=1 m hz 0.7 pf so t C 23 1. base 2. emitter 3. collector KST10 transistor (npn) 1 date:2011/05 www.htsemi.com semiconductor jinyu
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